MBR10H100CT
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR) TC
= 168
°C
IF(AV)
5.0
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC
= 165
°C
IFRM
10
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
180
A
Operating Junction Temperature (Note 1)
TJ
+175
°C
Storage Temperature
Tstg
65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Controlled Avalanche Energy (see test conditions in Figures 10 and 11)
WAVAL
100
mJ
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance?
Junction
?to?Case
?
Junction
?to?Ambient
RJC
RJA
2.0
60
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(IF
= 5.0 A, T
C
= 25
°C)
(IF
= 5.0 A, T
C
= 125
°C)
(IF
= 10 A, T
C
= 25
°C)
(IF
= 10 A, T
C
= 125
°C)
vF
0.73
0.61
0.85
0.71
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC
= 125
°C)
(Rated DC Voltage, TC
= 25
°C)
iR
4.5
0.0035
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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